Electronic properties of low temperature epitaxial silicon thin film photovoltaic devices grown by HWCVD

Thin Solid Films

Volumn 516, Issue 5, 2008, Pages 597-599

  Richardson, Christine E ^a   Langeland, Krista ^a   Atwater, Harry A ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Electrical properties; Growth mechanism; Hot wire deposition; Low temperature epitaxial growth; Silicon; Surface roughness

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; ELECTRONIC PROPERTIES; EPITAXIAL GROWTH; SCANNING ELECTRON MICROSCOPY; SILICON; SURFACE ROUGHNESS;

GROWTH MECHANISM; HOT WIRE DEPOSITION; LOW TEMPERATURE EPITAXIAL GROWTH; SURFACE RECOMBINATION VELOCITY;

THIN FILMS;

EID: 36749099391     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.06.178     Document Type: Article

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