Impact of GaN cap thickness on optical, electrical, and device properties in AlGaN/GaN high electron mobility transistor structures

Journal of Applied Physics

Volumn 106, Issue 2, 2009, Pages

  Waltereit, P ^a   Muller S ^a   Bellmann, K ^b   Buchheim, C ^b   Goldhahn, R ^b   Kohler K ^a   Kirste, L ^a   Baeumler, M ^a   Dammann, M ^a   Bronner, W ^a   Quay, R ^a   Ambacher, O ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^b ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; CAP LAYER THICKNESS; DEVICE PROPERTIES; DIRECT CURRENT RELIABILITY; DRAIN LEAKAGE CURRENT; ELECTRIC FIELD STRENGTH; GAN CAP; GAN CAP LAYERS; HALL EFFECT MEASUREMENT; IDEALITY FACTORS; PHOTOREFLECTANCE; PHOTOREFLECTANCE MEASUREMENTS; POWER-ADDED EFFICIENCY; SHEET CARRIER CONCENTRATION; TRANSITION PEAKS;

ELECTRIC FIELDS; ELECTRIC PROPERTIES; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; HALL EFFECT; LEAKAGE CURRENTS; MAGNETIC FIELD EFFECTS; OHMIC CONTACTS; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM; SPECTROSCOPIC ELLIPSOMETRY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 68249160882     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3184348     Document Type: Article

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