Development of a 2″-AlGaN/GaN HEMT technology on sapphire and SiC for mm-wave high-voltage power applications

Physica Status Solidi (A) Applied Research

Volumn 200, Issue 1, 2003, Pages 191-194

  Kiefer, R ^a   Quay, R ^a   Muller S ^a   Feltgen, T ^a   Raynor, B ^a   Schleife, J ^a   Kohler K ^a   Massler, H ^a   Ramberger, S ^a   Van Raay, F ^a   Tessmann, A ^a   Mikulla, M ^a   Weimann, G ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DRY ETCHING; ELECTRON MOBILITY; GALLIUM NITRIDE; LITHOGRAPHY; METALLORGANIC VAPOR PHASE EPITAXY; MILLIMETER WAVES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; POWER AMPLIFIERS; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE;

HALL MEASUREMENT; MILLIMETER WAVE HIGH VOLTAGE POWER APPLICATIONS; MULTIWAFER REACTOR; TWO DIMENSIONAL ELECTRON SHEET CONCENTRATIONS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0346885838     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200303415     Document Type: Article

References (6)

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