Determination of the surface potential of GaN:Si

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages

  Köhler, Klaus ^a   Maier, Markus ^a   Kirste, Lutz ^a   Wiegert, Joachim ^a   Menner, Hanspeter ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACTLESS METHODS; DEPLETION APPROXIMATION; DEPLETION LAYER; DOPING CONCENTRATION; LOW PRESSURES; METALORGANIC VAPOR PHASE EPITAXY; NON DESTRUCTIVE; SI SURFACE POTENTIAL; SI-DOPING; SURFACE STATE DENSITY;

CARRIER CONCENTRATION; ELECTRIC RESISTANCE; GALLIUM ALLOYS; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; SECONDARY ION MASS SPECTROMETRY; SILICON; SURFACE POTENTIAL;

SURFACE PROPERTIES;

EID: 68249137975     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200880773     Document Type: Article

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