Wideband 400 W pulsed power GaN HEMT amplifiers

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2008, Pages 303-306

  Krishnamurthy, K ^a   Martin, J ^a   Landberg, B ^a   Vetury, R ^a   Poulton, M J ^a  

^a RF MICRO DEVICES   (United States)

Author keywords

Broadband amplifiers; Gallium Nitride (GaN); High electron mobility transistors (HEMTs); Power amplifiers

Indexed keywords

ELECTRIC CONDUCTIVITY; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; IONIZATION OF GASES; MICROWAVES; NITRIDES; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM; TELECOMMUNICATION SYSTEMS;

ALGAN/GAN; DRAIN EFFICIENCIES; DUTY CYCLES; FIELD PLATES; GAN HEMT; HIGH BREAKDOWN VOLTAGES; HIGH POWER AMPLIFIERS; HIGH-ELECTRON-MOBILITY TRANSISTORS (HEMTS); OUTPUT POWERS; PULSE WIDTHS; PULSED OPERATIONS; PULSED OUTPUTS; PULSED POWERS; PULSED RADAR APPLICATIONS; WIDE BANDS;

BROADBAND AMPLIFIERS;

EID: 56249099128     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2008.4633163     Document Type: Conference Paper

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