Growth and electrical properties of Al xGa 1-xN/GaN heterostructures with different Al-content

Physica Status Solidi (A) Applications and Materials Science

Volumn 206, Issue 11, 2009, Pages 2652-2657

  Kohler K ^a   Muller S ^a   Waltereit, P ^a   Kirste, L ^a   Menner, H P ^a   Bronner, W ^a   Quay, R ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AL-CONTENT; DEVICE PROPERTIES; ELECTRICAL DATA; ELECTRICAL PROPERTY; EXTRINSIC TRANSCONDUCTANCE; HETEROSTRUCTURES; HIGH RESOLUTION X RAY DIFFRACTION; LARGE-SIGNAL PERFORMANCE; LOW PRESSURES; METALORGANIC VAPOR PHASE EPITAXY; MODEL-BASED; PIEZOELECTRIC POLARIZATIONS; SEMI-INSULATING; SHEET CARRIER DENSITIES; SIC SUBSTRATES; STRAIN-INDUCED EFFECTS;

BIOACTIVITY; CARRIER CONCENTRATION; CRYSTAL GROWTH; CRYSTALS; ELECTRIC PROPERTIES; ELECTRON MOBILITY; GALLIUM; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; HIGH ELECTRON MOBILITY TRANSISTORS; METALLORGANIC VAPOR PHASE EPITAXY; POLARIZATION; PRESSURE EFFECTS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

ALUMINUM;

EID: 73049086041     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200925168     Document Type: Article

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