Influence of Al doping on lattice strain and electrical properties of epitaxial GaN films grown by metalorganic chemical vapor deposition on Al 2O3 substrate

Applied Physics Letters

Volumn 84, Issue 14, 2004, Pages 2575-2577

  Jeong, Jae Kyeong ^a   Choi, Jung Hae ^a   Hwang, Cheol Seong ^a   Kim, Hyeong Joon ^a   Lee, Jae Hoon ^b   Lee, Jung Hee ^b   Kim, Chang Soo ^c  

^a Seoul National University   (South Korea)

^b Kyungpook National University   (South Korea)

^c Korea Research Institute of Standards and Science   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CONCENTRATION (PROCESS); CRYSTAL SYMMETRY; DISLOCATIONS (CRYSTALS); ELECTRON MOBILITY; ELECTRON SCATTERING; EPITAXIAL GROWTH; GALLIUM NITRIDE; LATTICE CONSTANTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; POINT DEFECTS; SEMICONDUCTOR DOPING; SUBSTITUTION REACTIONS; X RAY DIFFRACTION ANALYSIS;

DISLOCATION DENSITY; EDGE DISLOCATION; ISOELECTRONIC DOPING; THREADING DISLOCATIONS;

FILM GROWTH;

EID: 2342525157     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1702135     Document Type: Article

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