2-D analytical model for current-voltage characteristics and transconductance of AlGaN/GaN MODFETs

IEEE Transactions on Electron Devices

Volumn 55, Issue 1, 2008, Pages 261-267

  Li, Miao ^a   Wang, Yan ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

AlGaN GaN; Compact model; MODFETs; Sheet carrier concentration

Indexed keywords

BOUNDARY CONDITIONS; CURRENT VOLTAGE CHARACTERISTICS; EIGENVALUES AND EIGENFUNCTIONS; MATHEMATICAL MODELS; SCHRODINGER EQUATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; TRANSCONDUCTANCE;

ANALYTICAL MODEL; MODULATION-DOPED FIELD-EFFECT TRANSISTOR; POLYAKOV-SCHWIERZ MOBILITY MODEL;

FIELD EFFECT TRANSISTORS;

EID: 37749008542     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.911076     Document Type: Article

References (24)

1. 0.86N heterojunction," Appl. Phys. Lett., vol. 74, no. 25, pp. 3866-3868, Jun. 1999.
2. E. T. Yu, G. J. Sullivan, P. M. Asbeck, C. D. Wang, D. Qiao, and S. S. Lau, "Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors," Appl. Phys. Lett., vol. 71, no. 19, pp. 2794-2796, Nov. 1997.
3. W. Lu, V. Kumar, E. L. Piner, and I. Adesida, "DC, RF, and microwave noise performance of AlGaN-GaN field effect transistors dependence of aluminum concentration," IEEE Trans. Electron Devices, vol. 50, no. 4, pp. 1069-1074, Apr. 2003.
4. V. S. Kaper, R. M. Thompson, T. R. Prunty, and J. R. Shealy, "Signal generation, control, and frequency conversion AlGaN/GaN MODFET MMICs," IEEE Trans. Microw. Theory Tech., vol. 53, no. 1, p. 55, Jan. 2005.
5. V. Kaper, R. Thompson, T. Prunty, and J. R. Shealy, "X-band AlGaN/GaN MODFET MMIC voltage-controlled oscillator," in Proc. 11th GAAS Symp. Munich, Germany, 2003.
6. J. B. Shealy, J. A. Smart, and J. R. Shealy, "Low-phase noise AlGaN/GaN FET-based voltage controlled oscillators (VCOs)," IEEE Microw. Wireless Compon. Lett., vol. 11, no. 6, pp. 244-245, Jun. 2001.
7. M. Shur, Compound Semiconductor Electronics: The Age of Maturity. Singapore: World Scientific, 1996, p. 330.
8. S. S. Islam and A. F. M. Anwar, "Spice model of AlGaN/GaN MODFETs and simulation of VCO and power amplifier," Int. J. High Speed Electron. Syst., vol. 14, no. 3, pp. 853-859, 2004.
9. H. Statz, P. Newman, I. W. Smith, R. A. Pucel, and H. A. Haus, "GaAs FET device and circuit simulation in SPICE," IEEE Trans. Electron Devices, vol. ED-34, no. 2, pp. 160-169, Feb. 1987.
10. Rashmi, A. Kranti, S. Haldar, and R. S. Gupta, "An accurate charge control model for spontaneous and piezoelectric polarization dependent two-dimensional electron gas sheet charge density of lattice-mismatched AlGaN/GaN HEMTs," Solid State Electron., vol. 46, no. 5, pp. 621-630, May 2002.
11. Rashmi, S. Haldar, and R. S. Gupta, "2-D analytical model for current-voltage characteristics and output conductance of AlGaN/GaN MODFET," Microw. Opt. Technol. Lett., vol. 29, no. 2, pp. 117-123, Apr. 2001.
12. T.-H. Yu and K. F. Brennan, "Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization model," IEEE Trans. Electron Devices, vol. 50, no. 2, pp. 315-323, Feb. 2003.
13. K. Lee, M. S. Shur, T. J. Drummond, and H. Morkoc, "Current-voltage and capacitance-voltage characteristics of modulation-doped field-effect transistors," IEEE Trans. Electron Devices, vol. ED-30, no. 3, pp. 207-213, Mar. 1983.
14. N. DasGupta and A. Dasgupta, "An analytical expression for sheet carrier concentration vs gate voltage for HEMT modelling," Solid State Electron., vol. 36, no. 2, pp. 201-203, Feb. 1993.
15. J. A. Garrido, J. L. Sanchez-Rojas, A. Jimenez, E. Munoz, F. Onmes, and P. Gibart, "Polarization fields determination in AlGaN/GaN heterostructure field-effect transistors from charge control analysis," Appl. Phys. Lett., vol. 75, no. 16, pp. 2407-2409, Oct. 1999.
16. R. S. Muller, T. I. Kamins, and M. Chan, Device Electronicsfor Integrated Circuit. Hoboken, NJ: Wiley, 2003, pp. 482-490.
17. F. Schwierz, "An electron mobility model for wurtzite GaN," Solid State Electron., vol. 49, no. 6, pp. 889-895, Jun. 2005.
18. S. Yamakawa, S. Aboud, M. Saraniti, and S. M. Goodnick, "Influence of the electron-phonon interaction on electron transport in wurtzite GaN," Semicond. Sci. Technol., vol. 19, no. 4, p. S475, Apr. 2004.
19. V. O. Turin, "A modified transferred-electron high-field mobility model for GaN devices simulation," Solid State Electron., vol. 49, no. 10, pp. 1678-1682, Oct. 2005.
20. X. Z. Dang, P. M. Asbeck, E. T. Yu et al., "Measurement of drift mobility in AlGaN/GaN heterostructure field-effect transistor," Appl. Phys. Lett., vol. 74, no. 25, pp. 3890-3892, Jun. 1999.
21. S.M. Sze, Physics of Semiconductor Devices, 2nd ed. NewYork:WIley, 1981.
22. Y. F. Wu, B. P. Keller, P. Fini, S. Keller, T. J. Jenkins, L. T. Kehias, S. P. Denbaares, and U. K. Mishra, "Bias dependent microwave performance of AlGaN/GaN MODFETs up to 100 V," IEEE Electron Device Lett., vol. 18, no. 6, pp. 290-292, Jun. 1997.
23. Y. F. Wu, B. P. Keller, P. Fini, S. Keller, T. J. Jenkins, L. T. Kehias, S. P. Denbaares, and U. K. Mishra, "High Al-content AlGaN/GaN MODFETs for ultrahigh performance," IEEE Electron Device Lett., vol. 19, no. 2, pp. 50-53, Feb. 1998.
24. A. Asgaria, M. Kalafia, and L. Faraone, "A quasi-two-dimensional charge transport model of AlGaN/GaN high electron mobility transistors (MODFETs)," Physica E, vol. 28, no. 4, pp. 491-499, Sep. 2005.