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Volumn 157, Issue 4, 2010, Pages

A nonvolatile memory capacitor based on a double gold nanocrystal storing layer and high- k dielectric tunneling and control layers

(8) Mikhelashvili, V a Meyler, B a Yofis, S a Salzman, J a Garbrecht, M a Cohen Hyams, T a Kaplan, W D a Eisenstein, G a

a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN VOLTAGE; CHARGE STORAGE; CONTROL LAYERS; EQUIVALENT OXIDE THICKNESS; GATE VOLTAGES; GOLD NANOCRYSTALS; GOLD NANOPARTICLES; HIGH-K DIELECTRIC; METAL-INSULATOR-SEMICONDUCTORS; NON-VOLATILE MEMORIES; RETENTION PROPERTIES; STORAGE CHARGES;

CAPACITANCE; CAPACITORS; HAFNIUM COMPOUNDS; HYSTERESIS; METAL INSULATOR BOUNDARIES; MIS DEVICES;

NONVOLATILE STORAGE;

EID: 77949689173 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3302003 Document Type: Conference Paper

Times cited : (13)

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