JVD silicon nitride as tunnel dielectric in p-channel flash memory

IEEE Electron Device Letters

Volumn 23, Issue 2, 2002, Pages 91-93

  She, Min ^b   King, Tsu Jae ^a,b   Hu, Chenming ^a,b   Zhu, Wenjuan ^c   Luo, Zhijiong ^c   Han, Jin Ping ^c   Ma, Tso Ping ^a,c  

^a IEEE

^b UNIVERSITY OF CALIFORNIA   (United States)

^c Yale University   (United States)

Author keywords

Charge injection; Semiconductor memories; Silicon nitride

Indexed keywords

COMPUTER PROGRAMMING; DIELECTRIC MATERIALS; HOT CARRIERS; LEAKAGE CURRENTS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR STORAGE; SILICON NITRIDE; THRESHOLD VOLTAGE; VAPOR DEPOSITION;

CHANNEL DOPING CONCENTRATION; CHARGE INJECTION; HIGH TEMPERATURE OXIDE; HOT ELECTRON; HOT HOLES; JET VAPOR DEPOSITION; MULTILEVEL PROGRAMMING; PROGRAMMING VOLTAGE; STRESS INDUCED LEAKAGE CURRENT; TUNNEL DIELECTRICS;

FLASH MEMORY;

EID: 0036477431     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.981316     Document Type: Article

References (4)

1. Making silicon nitride film a viable gate dielectric
2. Device characteristics of 0.35 μm p-channel DINOR flash memory using band-to-band tunneling-induced hot electron (BBHE) programming
3. Multi-level p-channel flash memory