Concept of floating-dot memory transistors on silicon-on-insulator substrate

Microelectronic Engineering

Volumn 61, Issue 62, 2002, Pages 497-503

  Winkler, O ^a   Merget, F ^a   Heuser, M ^a   Hadam, B ^a   Baus, M ^a   Spangenberg, B ^a   Kurz, H ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

Flash memory; Floating dot; Floating gate; LPCVD; MOSFET; Nanodot; Silicon on insulator; Threshold voltage shift

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC CHARGE; ELECTRODES; ELECTRON TUNNELING; FLASH MEMORY; GATES (TRANSISTOR); MOSFET DEVICES; OXIDATION; SEMICONDUCTING SILICON; SILICA; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; SWITCHING THEORY; THRESHOLD VOLTAGE;

FLOATING-DOT MEMORIES; NANODOTS;

SEMICONDUCTOR STORAGE;

EID: 0036643836     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00463-X     Document Type: Article

References (7)