Retention in metal-oxide-semiconductor structures with two embedded self-aligned Ge-nanocrystal layers

Semiconductor Science and Technology

Volumn 22, Issue 8, 2007, Pages 837-842

  Duguay, S ^a   Burignat, S ^b,c   Kern, P ^a   Grob, J J ^a   Souifi, A ^c   Slaoui, A ^a  

^a Faculté de Médecine   (France)

^b ECOLE CENTRALE DE LYON   (France)

^c INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE MEASUREMENT; INTERFACES (MATERIALS); ION IMPLANTATION; NANOCRYSTALLINE MATERIALS; VOLTAGE MEASUREMENT;

ELECTRICAL CHARACTERIZATION; GERMANIUM NANOCRYSTALS; LOW PROGRAMMING VOLTAGES; METAL-OXIDE-SEMICONDUCTOR (MOS); NANOCRYSTAL LAYERS;

SEMICONDUCTOR MATERIALS;

EID: 34547431521     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/8/001     Document Type: Article

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