Effect of annealing conditions on the leakage current characteristics of ferroelectric PZT thin films grown by sol-gel process

Thin Solid Films

Volumn 338, Issue 1-2, 1999, Pages 149-154

  Cho, Seong Moon ^a,b   Jeon, Duk Young ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b LG   (South Korea)

Author keywords

Annealing; Electrical properties and measurements; PZT; Sol gel process

Indexed keywords

ANNEALING; CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; ELECTRON TRAPS; FERROELECTRIC MATERIALS; FILM GROWTH; FILM PREPARATION; LEAKAGE CURRENTS; PERMITTIVITY; SEMICONDUCTING LEAD COMPOUNDS; SOL-GELS; THIN FILMS;

ELECTRON HOPPING;

DIELECTRIC FILMS;

EID: 0032734307     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01334-0     Document Type: Article

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