Multilevel charge storage in Si nanocrystals arranged in double-dot-layers within SiO2

Microelectronic Engineering

Volumn 85, Issue 12, 2008, Pages 2362-2365

  Theodoropoulou, M ^a   Nassiopoulou, A G ^a  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

Author keywords

Electrical characterization; Non volatile memories; Si nanocrystal memories; Si nanocrystals

Indexed keywords

AMORPHOUS SILICON; ATOMS; CRYSTALLOGRAPHY; DATA STORAGE EQUIPMENT; FLOATING BREAKWATERS; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; NANOCRYSTALLINE ALLOYS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NONVOLATILE STORAGE; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR STORAGE; SILICON; SILICON COMPOUNDS; SUBSTRATES;

AMORPHOUS SI; CHARGE RETENTIONS; CHARGING/DISCHARGING; DEVICE RELIABILITIES; DISPLACEMENT CURRENTS; ELECTRICAL CHARACTERIZATION; FLATBAND VOLTAGE SHIFTS; GATE OXIDE THICKNESSES; MOS STRUCTURES; MULTILEVEL CHARGES; MULTIPLE BITS; NANOCRYSTAL LAYERS; NON-VOLATILE MEMORIES; SI-NANOCRYSTAL MEMORIES; SI-NANOCRYSTALS; TUNNEL OXIDE]; TWO LAYERS;

NANOCRYSTALS;

EID: 56949088657     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.09.040     Document Type: Article

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