Current-voltage analysis of a-Si:H Schottky diodes

Applied Surface Science

Volumn 252, Issue 18, 2006, Pages 6269-6274

  Şahin, Mehmet ^a   Durmuş, Haziret ^a   Kaplan, Ruhi ^b  

^a SELCUK UNIVERSITY   (Turkey)

^b MERSIN UNIVERSITY   (Turkey)

Author keywords

A Si:H Schottky diode; Carrier density; DOS; Fill factor; Space charge limited current

Indexed keywords

AMORPHOUS SILICON; CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; FERMI LEVEL; HYDROGENATION; PHOTOCURRENTS; SEMICONDUCTING SILICON;

A-SI:H SCHOTTKY DIODES; FILL FACTOR; SPACE-CHARGE LIMITED CURRENTS;

SCHOTTKY BARRIER DIODES;

EID: 33746352767     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.08.034     Document Type: Article

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