The analysis of lateral distribution of barrier height in identically prepared Co/n-Si Schottky diodes

Journal of Alloys and Compounds

Volumn 486, Issue 1-2, 2009, Pages 343-347

  Guler G ^a   Karataş, Ş ^b   Güllü, Ö ^c   Bakkaloǧlu, Ö F ^d  

^a ADIYAMAN UNIVERSITY   (Turkey)

^b KAHRAMANMARAS SUTCU IMAM UNIVERSITY   (Turkey)

^c BATMAN UNIVERSITY   (Turkey)

^d GAZIANTEP UNIVERSITY   (Turkey)

Author keywords

Barrier height; Ideality factor; Inhomogeneity; Metal semiconductor structures; Silicon

Indexed keywords

BARRIER HEIGHT; BARRIER HEIGHTS; CAPACITANCE VOLTAGE; DOPING DENSITIES; IDEALITY FACTOR; IDEALITY FACTORS; INHOMOGENEITY; LATERAL DISTRIBUTIONS; LINEAR RELATIONSHIPS; MEAN VALUES; METAL-SEMICONDUCTOR STRUCTURES; REVERSE BIAS; SI SCHOTTKY DIODE;

CURRENT VOLTAGE CHARACTERISTICS; DISTRIBUTION FUNCTIONS; METALS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; STRUCTURAL METALS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 70350092512     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2009.06.163     Document Type: Article

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