Fabrication and electrical characterization of n-InSb on porous Si heterojunctions prepared by liquid phase epitaxy

Microelectronics Journal

Volumn 39, Issue 2, 2008, Pages 253-260

  Farag, A A M ^a   Ashery, A ^b   Terra, F S ^b  

^a Ain Shams University   (Egypt)

^b NATIONAL RESEARCH CENTRE   (Egypt)

Author keywords

Heterojunctions; Liquid phase epitaxy; Porous silicon

Indexed keywords

INDIUM; LIQUID PHASE EPITAXY; POROUS SILICON; SCANNING ELECTRON MICROSCOPY; THIN FILMS; X RAY DIFFRACTION;

MONOCRYSTALLINE EPILAYER; TEMPERATURE RANGE;

HETEROJUNCTIONS;

EID: 38749130056     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2007.10.029     Document Type: Article

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