Properties of gallium- and aluminum-doped bulk ZnO obtained from single-crystals grown by liquid phase epitaxy

Journal of Crystal Growth

Volumn 311, Issue 19, 2009, Pages 4408-4413

  Kobayashi, Jun ^a,b   Ohashi, Naoki ^b,c   Sekiwa, Hideyuki ^a   Sakaguchi, Isao ^b   Miyamoto, Miyuki ^a   Wada, Yoshiki ^b   Adachi, Yutaka ^b   Matsumoto, Kenji ^b,c   Haneda, Hajime ^b,c  

^a MITSUBISHI GAS CHEMICAL COMPANY INC   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c KYUSHU UNIVERSITY   (Japan)

Author keywords

A1. Doping; A2. Liquid phase epitaxy; B1. Oxides; B2. Semiconducting II VI materials

Indexed keywords

A1. DOPING; A2. LIQUID PHASE EPITAXY; AL-CONCENTRATION; B1. OXIDES; B2. SEMICONDUCTING II-VI MATERIALS; BULK PROPERTIES; DONOR BINDING; DOPANT CONCENTRATIONS; ELECTRON CONCENTRATION; EXCITONIC LUMINESCENCE; OPTICAL APPLICATIONS; POTENTIAL SOLUTIONS; ROOM TEMPERATURE; SINGLE-CRYSTALLINE; ZNO;

ALUMINA; ALUMINUM; BINDING ENERGY; CONCENTRATION (PROCESS); CRYSTAL GROWTH; ELECTRON MOBILITY; LIQUID PHASE EPITAXY; LIQUIDS; OXIDE FILMS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; THICK FILMS; ZINC; ZINC OXIDE;

SINGLE CRYSTALS;

EID: 69949127402     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.07.037     Document Type: Article

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