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Volumn 518, Issue 6 SUPPL. 1, 2010, Pages

Giant growth of single crystalline Ge on insulator by seeding lateral liquid-phase epitaxy

Author keywords

Ge on insulator; Liquid phase epitaxy; LSI

Indexed keywords

CRYSTAL QUALITIES; DEFECT-FREE; GE ON INSULATORS; GROWTH FRONT; HIGH QUALITY; LATERAL DIFFUSION; MICRO-PROBE RAMAN; SI ATOMS; SI(1 0 0); SINGLE-CRYSTALLINE; SOLIDIFICATION TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY OBSERVATION;

EID: 73649125501     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.10.081     Document Type: Article
Times cited : (14)

References (17)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.