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Volumn 518, Issue 6 SUPPL. 1, 2010, Pages
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Giant growth of single crystalline Ge on insulator by seeding lateral liquid-phase epitaxy
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Author keywords
Ge on insulator; Liquid phase epitaxy; LSI
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Indexed keywords
CRYSTAL QUALITIES;
DEFECT-FREE;
GE ON INSULATORS;
GROWTH FRONT;
HIGH QUALITY;
LATERAL DIFFUSION;
MICRO-PROBE RAMAN;
SI ATOMS;
SI(1 0 0);
SINGLE-CRYSTALLINE;
SOLIDIFICATION TEMPERATURE;
TRANSMISSION ELECTRON MICROSCOPY OBSERVATION;
CRYSTAL GROWTH;
CRYSTALLINE MATERIALS;
GERMANIUM;
LIQUIDS;
LSI CIRCUITS;
SILICON;
THERMAL GRADIENTS;
THERMOANALYSIS;
TRANSMISSION ELECTRON MICROSCOPY;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 73649125501
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2009.10.081 Document Type: Article |
Times cited : (14)
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References (17)
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