Lattice-mismatched InGaP/GaAs (1 1 1)B liquid phase epitaxy with epitaxial lateral overgrowth

Journal of Crystal Growth

Volumn 311, Issue 3, 2009, Pages 842-846

  Hayashi, S ^a   Nangu, M ^a   Morikuni, T ^a   Owa, S ^a   Takahashi, N S ^a  

^a KEIO UNIVERSITY   (Japan)

Author keywords

A3. Liquid phase epitaxy; A3. Selective epitaxy; B2. Semiconducting III V materials; B2. Semiconducting indium gallium phosphide

Indexed keywords

CRYSTAL GROWTH; ENERGY GAP; EPITAXIAL LAYERS; GALLIUM PHOSPHIDE; INDIUM; LASER CLADDING; LATTICE MISMATCH; LIQUID PHASE EPITAXY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM PHOSPHIDE; SILICON COMPOUNDS; SUBSTRATES;

A3. LIQUID PHASE EPITAXY; A3. SELECTIVE EPITAXY; B2. SEMICONDUCTING III-V MATERIALS; B2. SEMICONDUCTING INDIUM GALLIUM PHOSPHIDE; BAND GAP DIFFERENCES; CLADDING LAYERS; CRYSTAL QUALITIES; DOUBLE-HETEROSTRUCTURE; EPITAXIAL LATERAL OVERGROWTHS; GAAS; GAAS SUBSTRATES; INGAP/GAAS; LARGE LATTICE MISMATCHES; LATTICE-MISMATCHED; SPIN-ON DIFFUSIONS; WIDE BAND GAPS;

GALLIUM ALLOYS;

EID: 59749105194     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.09.180     Document Type: Article

References (4)

1. Kaneko M., Nakayama S., Kashiwa K., Aizawa S., and Takahashi N.S. Cryst. Res. Technol. 37 (2002) 177
2. Otsubo K., Nishijima Y., Uchida T., Shoji H., and Nakajima K. Jpn. J. Appl. Phys. 38 (1999) L312
3. Nakayama S., Kaneko M., Aizawa S., Kashiwa K., and Takahashi N.S. J. Crystal Growth 236 (2002) 132
4. S. Uematsu, M. Nangu, N. Saito, N.S. Takahashi, CGCT-3, Beijing, 2005.