Reactive ion etching of SiC using C2F6/O2 inductively coupled plasma

Journal of Electronic Materials

Volumn 31, Issue 3, 2002, Pages 209-213

  Kong, S M ^a   Choi, H J ^a   Lee, B T ^a   Han, S Y ^b   Lee, J L ^b  

^a Chonnam National University   (South Korea)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

Electrode effects; ICP RIE; Mesa profile; SiC

Indexed keywords

ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; FLUORINE COMPOUNDS; INDUCTIVELY COUPLED PLASMA; MIXTURES; MORPHOLOGY; OXYGEN; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SINGLE CRYSTALS; SURFACE ROUGHNESS; SURFACES;

BIAS POWER; CHAMBER CLEANING; ELECTRODE EFFECTS; ETCH RATE; GAS MIXTURES; MESA PROFILE; SCHOTTKY BARRIER MEASUREMENT; SURFACE DAMAGE;

SILICON CARBIDE;

EID: 0036502849     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-002-0208-2     Document Type: Article

References (10)