Secondary electron doping contrast: Theory based on scanning electron microscope and Kelvin probe force microscopy measurements

Journal of Applied Physics

Volumn 107, Issue 1, 2010, Pages

  Volotsenko, I ^a   Molotskii, M ^a   Barkay, Z ^a   Marczewski, J ^b   Grabiec, P ^b   Jaroszewicz, B ^b   Meshulam, G ^a   Grunbaum, E ^a   Rosenwaks, Y ^a  

^a TEL AVIV UNIVERSITY   (Israel)

^b ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR CONCENTRATIONS; BUILT-IN POTENTIAL; DOPANT CONCENTRATIONS; DOPANT CONTRAST; ESCAPE DEPTH; ESCAPE PROBABILITY; KELVIN PROBE FORCE MICROSCOPY; LOGARITHMIC DEPENDENCE; N-DOPED; P-N JUNCTION; SCANNING ELECTRON MICROSCOPE; SECONDARY ELECTRON EMISSIONS; SECONDARY ELECTRON IMAGES; SECONDARY ELECTRONS; SURFACE BAND BENDING; SURFACE ELECTRIC FIELDS;

DOPING (ADDITIVES); ELECTRIC FIELDS; ELECTRON AFFINITY; ELECTRON MICROSCOPES; ELECTRON OPTICS; ELECTRONS; PHOSPHORUS; PROBABILITY DISTRIBUTIONS; PROBES; SCANNING ELECTRON MICROSCOPY; SECONDARY EMISSION;

SEMICONDUCTOR JUNCTIONS;

EID: 75649102488     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3276090     Document Type: Article

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