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Volumn 96, Issue 1, 2004, Pages 715-722

Photoionization cross-section analysis for a deep trap contributing to current collapse in GaN field-effect transistors

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON TRANSITIONS; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; INTEGRATION; IONIZATION; NUMERICAL ANALYSIS; OPTOELECTRONIC DEVICES; PHONONS;

EID: 3142668011     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1753076     Document Type: Article
Times cited : (68)

References (76)
  • 11
    • 0016519855 scopus 로고
    • A. A. Kopylov and A. N. Pikhtin, Fiz. Tekh. Poluprovodn. (S.-Peterburg) 8, 2398 (1974) [Sov. Phys. Semicond. 8, 1563 (1975)].
    • (1975) Sov. Phys. Semicond. , vol.8 , pp. 1563
  • 34
    • 3142736950 scopus 로고
    • A. A. Kopylov and A. N. Pikhtin, Fiz. Tekh. Poluprovodn. (S.-Peterburg) 10, 15 (1976) [Sov. Phys. Semicond. 10, 7 (1976)].
    • (1976) Sov. Phys. Semicond. , vol.10 , pp. 7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.