Effect of experimental parameters on doping contrast of Si p-n junctions in a FEG-SEM

Microelectronic Engineering

Volumn 73-74, Issue , 2004, Pages 948-953

  Kazemian, P ^a   Rodenburg, C ^b   Humphreys, C J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Doping contrast; Electron hole pair generation; Magnification; Scan time; Scanning electron microscope

Indexed keywords

ELECTRIC SPACE CHARGE; SCANNING; SCANNING ELECTRON MICROSCOPY; SCATTERING; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

DOPING CONTRAST; ELECTRON-HOLE PAIR GENERATION; MAGNIFICATION; SCAN TIME;

SEMICONDUCTOR JUNCTIONS;

EID: 2542448606     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(04)00249-7     Document Type: Conference Paper

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