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Volumn 15, Issue 2, 2009, Pages 125-129

Secondary electron emission contrast of quantum wells in GaAs p-i-n junctions

Author keywords

Conductance band; Dopant contrast; GaAs; High resolution scanning electron microscopy; Quantum wells; Secondary electrons; Valence band

Indexed keywords

GALLIUM; GALLIUM ARSENIDE; NANOMATERIAL; ORGANOARSENIC DERIVATIVE;

EID: 66349120571     PISSN: 14319276     EISSN: 14358115     Source Type: Journal    
DOI: 10.1017/S1431927609090205     Document Type: Article
Times cited : (2)

References (23)
  • 2
    • 84937968728 scopus 로고    scopus 로고
    • The electric field and dopant distribution in p-i-n structures observe by ionization potential(dopant contrast) microscopy in the HRSEM
    • Oxford, UK, Cullis, A.G. & Hutchison, J.L.(Eds.), Berlin: Springer Press
    • BARKAY, Z., GRUNBAUM, E., SHAPIRA, Y., WILSHAW, P., BARNHAM, K., BUSHNELL, D.B., EKINS-DAUKES, N.J. & MAZZER, M. (2005). The electric field and dopant distribution in p-i-n structures observe by ionization potential(dopant contrast) microscopy in the HRSEM. Proc Microscopy of Semiconducting Materials XIV, Oxford, UK, Cullis, A.G. & Hutchison, J.L.(Eds.), pp. 503- 506. Berlin: Springer Press.
    • (2005) Proc Microscopy of Semiconducting Materials XIV , pp. 503-506
    • Barkay, Z.1    Grunbaum, E.2    Shapira, Y.3    Wilshaw, P.4    Barnham, K.5    Bushnell, D.B.6    Ekins-Daukes, N.J.7    Mazzer, M.8
  • 6
    • 33748092710 scopus 로고    scopus 로고
    • Imaging and dopant profiling of silicon carbide devices by secondary electron dopant contrast
    • DOI 10.1109/TDMR.2006.876605, 1673712
    • BUZZO, M., CIAPPA, M. & FICHTNER, W. (2006). Imaging and dopant profiling of silicon carbide devices by secondary electron dopant contrast. IEEE Trans Device Mater Reliab 6, 203-212. (Pubitemid 44304130)
    • (2006) IEEE Transactions on Device and Materials Reliability , vol.6 , Issue.2 , pp. 203-212
    • Buzzo, M.1    Ciappa, M.2    Fichtner, W.3
  • 7
    • 33750720873 scopus 로고
    • Electron probe microanalysis
    • CASTAING, R. (1960). Electron probe microanalysis. Adv Electron El Phys 13, 317-386.
    • (1960) Adv Electron El Phys , vol.13 , pp. 317-386
    • Castaing, R.1
  • 8
    • 0037362191 scopus 로고    scopus 로고
    • Dopant mapping for the nanotechnology age
    • CASTELLI, R.M., MULLER, D.A. & VOYLES, P.M. (2003). Dopant mapping for the nanotechnology age. Nat Mater 2, 129-131.
    • (2003) Nat Mater , vol.2 , pp. 129-131
    • Castelli, R.M.1    Muller, D.A.2    Voyles, P.M.3
  • 9
    • 0012284106 scopus 로고
    • Electron beam induced potential contrast on unbiased planar transistors
    • CHANG, T.H.P. & NIXON, W.C. (1967). Electron beam induced potential contrast on unbiased planar transistors. Solid State Electr 10, 701-704.
    • (1967) Solid State Electr , vol.10 , pp. 701-704
    • Chang, T.H.P.1    Nixon, W.C.2
  • 10
    • 69849085522 scopus 로고    scopus 로고
    • Quantitative dopant profiling in SEM
    • Cambridge, UK, Cullis, A.G. & Midgley, P.M. (Eds.), Berlin: Springer Press
    • CHEE, K.W.A., RODENBURG, C. & HUMPHREYS, C.J. (2007). Quantitative dopant profiling in SEM. Proc Microscopy of Semiconducting Materials XV Conf, Cambridge, UK, Cullis, A.G. & Midgley, P.M. (Eds.), pp. 407-410. Berlin: Springer Press.
    • (2007) Proc Microscopy of Semiconducting Materials XV Conf , pp. 407-410
    • Chee, K.W.A.1    Rodenburg, C.2    Humphreys, C.J.3
  • 12
    • 28744448845 scopus 로고    scopus 로고
    • Why is it possible to detect doped regions of semiconductors in low voltage SEM: A review and update
    • EL-GOMATI, M., ZAGGOUT, F., JAYACODY, H., TEAR, S. & WILSON, K. (2005). Why is it possible to detect doped regions of semiconductors in low voltage SEM: A review and update. Surf Interface Anal 37, 901-911.
    • (2005) Surf Interface Anal , vol.37 , pp. 901-911
    • El-Gomati, M.1    Zaggout, F.2    Jayacody, H.3    Tear, S.4    Wilson, K.5
  • 13
    • 0036607445 scopus 로고    scopus 로고
    • Dopant profiling with the scanning microscope-A study of Si
    • ELLIOTT, S.L., BROOM, R.F. & HUMPHREYS, C.J. (2002). Dopant profiling with the scanning microscope-A study of Si. J Appl Phys 91, 9116-9122.
    • (2002) J Appl Phys , vol.91 , pp. 9116-9122
    • Elliott, S.L.1    Broom, R.F.2    Humphreys, C.J.3
  • 15
    • 69849105431 scopus 로고    scopus 로고
    • A database for electron solid interactions
    • JOY, D.C. (2008). A database for electron solid interactions. Available at http://web.utk.edu/srcutk/database.doc.
    • (2008) Available at
    • Joy, D.C.1
  • 16
    • 33748850134 scopus 로고    scopus 로고
    • High resolution quantitative two-dimensional mapping using energy-filtered secondary electron imaging
    • KAZEMIAN, P., MENTINK, S.A.M., RODENBURG, C. & HUMPHREYS, C.J. (2006). High resolution quantitative two-dimensional mapping using energy-filtered secondary electron imaging. J Appl Phys 100, 054901-54907
    • (2006) J Appl Phys , vol.100 , pp. 054901-54907
    • Kazemian, P.1    Mentink, S.A.M.2    Rodenburg, C.3    Humphreys, C.J.4
  • 17
    • 0029278241 scopus 로고
    • Field-emission SEM imaging of compositional and doping layer semiconductor superlattices
    • PEROVIC, D.D., CASTELL, M.R., HOWIE, A., LAVOIE, C, TIEDJE, T. & COLE, J.S.W. (1995). Field-emission SEM imaging of compositional and doping layer semiconductor superlattices. Ultramicros-copy 58, 104-113.
    • (1995) Ultramicros-copy , vol.58 , pp. 104-113
    • Perovic, D.D.1    Castell, M.R.2    Howie, A.3    Lavoie C4    Tiedje, T.5    Cole, J.S.W.6
  • 19
    • 0037115579 scopus 로고    scopus 로고
    • Energy-filtered imaging in a field-emission scanning electron microscope for dopant mapping in semiconductors
    • SCHONJAHN, C, HUMPHREYS, C.J. & GLICK, M. (2002). Energy-filtered imaging in a field-emission scanning electron microscope for dopant mapping in semiconductors. J Appl Phys 92, 7667-7671.
    • (2002) J Appl Phys , vol.92 , pp. 7667-7671
    • Schonjahn C1    Humphreys, C.J.2    Glick, M.3
  • 20
    • 27744506129 scopus 로고    scopus 로고
    • Nanoscale potential distribution across multi-quantum well structures: Kelvin probe force microscopy and secondary electron imaging
    • SCHWARZMAN, A., GRUNBAUM, E., STRASSBURG, E., LEPKIFKER, E., BOAG, A. & ROSENWAKS, Y. (2005). Nanoscale potential distribution across multi-quantum well structures: Kelvin probe force microscopy and secondary electron imaging. J Appl Phys 98, 084310-1-4.
    • (2005) J Appl Phys , vol.98 , pp. 084310-14
    • Schwarzman, A.1    Grunbaum, E.2    Strassburg, E.3    Lepkifker, E.4    Boag, A.5    Rosenwaks, Y.6
  • 21
    • 0034096053 scopus 로고    scopus 로고
    • Mechanism for secondary electron dopant contrast in the SEM
    • SEALY, C.P., CASTELL, M.R. & WILSHAW, PR. (2000). Mechanism for secondary electron dopant contrast in the SEM. J Electron Microsc 49, 311-321.
    • (2000) J Electron Microsc , vol.49 , pp. 311-321
    • Sealy, C.P.1    Castell, M.R.2    Wilshaw, P.R.3
  • 23
    • 0001705001 scopus 로고    scopus 로고
    • Secondary electron imaging as a two-dimensional dopant profiling technique: Review and update
    • VENABLES, D., JAIN, H. & COLLINS, D.C. (1998). Secondary electron imaging as a two-dimensional dopant profiling technique: Review and update. J Vac Sci Technol B 16, 362-366.
    • (1998) J Vac Sci Technol B , vol.16 , pp. 362-366
    • Venables, D.1    Jain, H.2    Collins, D.C.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.