Micro-Raman study of thermoelastic stress distribution in oxidized silicon membranes and correlation with finite element modeling

Materials Science and Engineering B

Volumn 46, Issue 1-3, 1997, Pages 24-28

  Guyot, Y ^a   Malhaire, C ^b   Le Berre, M ^b   Champagnon, B ^a   Sibai, A ^b   Bustarret, E ^c   Barbier, D ^b  

^a UNIVERSITÉ LYON 1   (France)

^b INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^c LABORATOIRE DE CRISTALLOGRAPHIE   (France)

Author keywords

Finite element modeling; Silicon on insulator pressure; Thermoelastic stress

Indexed keywords

COMPUTER SOFTWARE; CORRELATION METHODS; FINITE ELEMENT METHOD; MATHEMATICAL MODELS; MEMBRANES; OXIDATION; RAMAN SPECTROSCOPY; SENSORS; STRESS ANALYSIS; STRESS CONCENTRATION; THERMAL STRESS; THERMOELASTICITY;

PRESSURE SENSORS; SOFTWARE PACKAGE ANSYS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0041725766     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01925-3     Document Type: Article

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