Removal of charging on SiO2/Si structure during photoelectron spectroscopy measurements by metal overlayer

Journal of Electron Spectroscopy and Related Phenomena

Volumn 176, Issue 1-3, 2010, Pages 8-12

  Kim, Woo Byoung ^a   Nishiyama, Masayoshi ^a   Kobayashi, Hikaru ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Charging; Final state relaxation; Leakage current; MOS; Photoemission; SiO2 Si; XPS

Indexed keywords

AQUEOUS SOLUTIONS; ATOMIC DENSITY; CHARGING; ENERGY DIFFERENCES; ENERGY SHIFT; FINAL STATE; FINAL STATE RELAXATION; LOWER DENSITY; POSITIVE CHARGES; POTENTIAL GRADIENTS; SI SUBSTRATES; SILICON DIOXIDE; THICKNESS DEPENDENCE; XPS;

EMISSION SPECTROSCOPY; LEAKAGE CURRENTS; METAL RECOVERY; PALLADIUM; PHOTOEMISSION; SILICA; SILICON; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

SILICON OXIDES;

EID: 71849083195     PISSN: 03682048     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.elspec.2009.10.003     Document Type: Article

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