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Volumn 176, Issue 1-3, 2010, Pages 8-12
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Removal of charging on SiO2/Si structure during photoelectron spectroscopy measurements by metal overlayer
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Author keywords
Charging; Final state relaxation; Leakage current; MOS; Photoemission; SiO2 Si; XPS
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Indexed keywords
AQUEOUS SOLUTIONS;
ATOMIC DENSITY;
CHARGING;
ENERGY DIFFERENCES;
ENERGY SHIFT;
FINAL STATE;
FINAL STATE RELAXATION;
LOWER DENSITY;
POSITIVE CHARGES;
POTENTIAL GRADIENTS;
SI SUBSTRATES;
SILICON DIOXIDE;
THICKNESS DEPENDENCE;
XPS;
EMISSION SPECTROSCOPY;
LEAKAGE CURRENTS;
METAL RECOVERY;
PALLADIUM;
PHOTOEMISSION;
SILICA;
SILICON;
SUBSTRATES;
X RAY PHOTOELECTRON SPECTROSCOPY;
SILICON OXIDES;
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EID: 71849083195
PISSN: 03682048
EISSN: None
Source Type: Journal
DOI: 10.1016/j.elspec.2009.10.003 Document Type: Article |
Times cited : (4)
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References (33)
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