The role of extra-atomic relaxation in determining Si 2p binding energy shifts at silicon/silicon oxide interfaces

Journal of Applied Physics

Volumn 82, Issue 5, 1997, Pages 2298-2307

  Zhang, K Z ^a   Greeley, J N ^a   Banaszak Holl, Mark M ^a   McFeely, F R ^b  

^a UNIVERSITY OF MICHIGAN   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000914137     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366037     Document Type: Article

References (45)

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