Oxide thickness dependence of energy shifts in the Si 2p levels for the SiO 2/Si structure, and its elimination by a palladium overlayer

Applied Physics Letters

Volumn 73, Issue 7, 1998, Pages 933-935

  Kobayashi, Hikaru ^a,b   Kubota, Tomohiro ^b   Kawa, Hidefumi ^b   Nakato, Yoshihiro ^b   Nishiyama, Masayoshi ^b  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000355408     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122042     Document Type: Article

References (11)

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