High-performance and damage-free magnetic film etching using pulse-time-modulated Cl2 plasma

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 6 B, 2006, Pages 5542-5544

  Mukai, Tomonori ^a,b   Hada, Hiromitsu ^b   Tahara, Shuichi ^b   Yoda, Hiroaki ^c   Samukawa, Seiji ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b NEC CORPORATION   (Japan)

^c TOSHIBA CORPORATION   (Japan)

Author keywords

Magnetic film; MRAM; Negative ion; Pulse time modulated plasma; Reactive ion etching

Indexed keywords

CHLORINE; CORROSION RESISTANCE; MAGNETORESISTANCE; PLASMA ETCHING; RADIATION DAMAGE; RANDOM ACCESS STORAGE; REACTIVE ION ETCHING;

MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM); PULSE-TIME-MODULATED PLASMA;

MAGNETIC FILMS;

EID: 33745637012     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.5542     Document Type: Review

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