Organometallic vapor phase epitaxy of GaN on Si(111) with a γ-Al2O3(111) epitaxial intermediate layer

Journal of Crystal Growth

Volumn 236, Issue 1-3, 2002, Pages 21-25

  Wakahara, Akihiro ^a   Oishi, Hiroshi ^a   Okada, Hiroshi ^a   Yoshida, Akira ^a   Koji, Yoshiaki ^a   Ishida, Makoto ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

A3. Metalorganic vapor phase epitaxi; A3. Organometallic vapor phase epitaxi; B1. Nitrides; B2. Semiconducting III V compounds

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; DEPOSITION; GALLIUM NITRIDE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SUBSTRATES; THERMODYNAMIC STABILITY; X RAY DIFFRACTION ANALYSIS;

HETEROEPITAXIAL GROWTH; INTERFERENCE MICROSCOPES; INTERMEDIATE LAYERS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0036499055     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02090-5     Document Type: Article

References (14)