Double-well model of dielectric relaxation current

Applied Physics Letters

Volumn 84, Issue 18, 2004, Pages 3489-3491

  Jameson, John R ^a   Harrison, Walter ^a   Griffin, P B ^b   Plummer, J D ^b  

^a STANFORD UNIVERSITY   (United States)

^b Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; DOUBLE-WELL MODELS; FIELD-EFFECT TUNNELING; POTENTIAL ENERGY SURFACES; QUANTUM CONFINEMENT;

CRYSTALS; DIELECTRIC RELAXATION; ELECTRIC CHARGE; ELECTRIC CURRENTS; ELECTRON TUNNELING; GATES (TRANSISTOR); GRAIN BOUNDARIES; PERMITTIVITY; POLYCRYSTALLINE MATERIALS; QUANTUM THEORY;

GLASS;

EID: 2542452977     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1738177     Document Type: Article

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