Physics and mechanisms of dielectric trap profiling by Multi-Frequency Charge Pumping (MFCP) method

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2009, Pages 13-20

  Masuduzzaman, M ^a   Islam, A E ^a   Alam, M A ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

Bulk trap; Charge pumping; High k dielectric; Trap profiling

Indexed keywords

BULK TRAP; BULK TRAPS; CHARGE PUMPING; COMPLEMENTARY METHODS; ELECTRON-HOLE RECOMBINATION; ENERGY SPACES; HIGH-K DIELECTRIC; MULTI FREQUENCY; NMOS TRANSISTORS; NUMERICAL MODELS; PULSE DURATIONS; SHORT CHANNELS; THEORETICAL STUDY; TRAP PROFILING; VOLTAGE LEVELS;

DIELECTRIC MATERIALS; GATE DIELECTRICS; GATES (TRANSISTOR); PUMPS; SILICON COMPOUNDS;

NUMERICAL METHODS;

EID: 70449095966     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2009.5173218     Document Type: Conference Paper

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