In depth analysis of VT instabilities in HFO2 technologies by charge pumping measurements and electrical modeling

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2007, Pages 61-66

  Garros, X ^a   Mitard, J ^b   Leroux, C ^a   Reimbold, G ^a   Boulanger, F ^a  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; ELECTRIC VARIABLES MEASUREMENT; ELECTRON ENERGY LEVELS; HYDROGEN INORGANIC COMPOUNDS; MATHEMATICAL MODELS;

CHARGE PUMPING MEASUREMENTS; DETRAPPING PHENOMENA; ELECTRICAL MODELING;

ELECTRICAL ENGINEERING;

EID: 34548716440     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2007.369869     Document Type: Conference Paper

References (16)

1. C.D Young, S. Nadkarni, D. He, H.R. Harris, R. Choi, J.J. Peterson, J.H. Sim, S.A. Krishnan, J. Barnett, E. Vogel, B.H. Lee, P.Zeitzoff, G. A. Brown and G. Bersuker, "detection of electron trap generation due to constant voltage stress on high-k gate stacks", Proc. of IRPS, pp. 169, 2006.
2. 2/metal gate stacks", Proc. of IRPS, pp. 174, 2006
3. C, Leroux, J. Mitard, G. Ghibaudo, X. Garros, G. Reimbold, and F. Martin, "Characterization and modeling of hysteresis phenomena in high K dielectrics", IEDM Tech. Dig, pp. 737, 2004
4. 2 gate dielectrics", Proc. of IRPS, pp. 41, 2003
5. 2 gate dielectrics: Comparison between chargepumping and pulsed ID-VG", Mcroelect. Engin, Vol 72, pp.267, 2004
6. B. Guillaumot, X. Garros, F. Lime, K. Oshima, B. Tavel et a al, "75 nm damascene metal gate and highrk integration for advanced CMOS devices", IEDM Tech. Dig., pp. 355, 2002
7. J. Brugler and P.G.A Jesper, "Charge pumping in MOS devices", Trans. On Elec. Dev., pp. 297, 1969
8. G.Van den Bosch, G. Groeseneken, H.E, Maes, "On the geometric component of charge-pumping current, in MOSFETs", Electron Dev. Lett, pp. 107, 1993
9. F. Stern and W. E. Howard, "Properties of semiconductor surface inversion layers in the electric quantum limit", Physical Review, Vol. 163, pp. 816, 1963
10. C. Chang, "Tunneling in thin gate oxide MOS structures", Phd dissertation, University of California, Berkeley, 1984.
11. 2 and HfAlO gate stacks", IEDM Tech, Dig., pp,731, 2002
12. 2", Appl. Phys. Lett, Vol. 81, pp. 1053, 2002
13. L.F. Register, E., Rosenbaum and K. Yang "Analytic model for direct tunneling current in polycrystalline silicon-gate metal-oxide-semiconductor devices", Appl. Phys. Lett., Vol 74, pp. 457, 1999
14. Y. Ando and. T. Itoh, "Calculation of transmission tunneling current across arbitrary potential barriers", J. Appl. Phys. Vol. 61, pp. 1497, 1987
15. J. Mitard, C. Leroux, G. Reimbold, X. Garros, F. Martin, G. Ghibaudo, "Characterization and modeling of defects in High-K layers: through fast electrical transient measurements", in "Defects in High-K Dielectric Stacks", pp. 73-84, Springer, 2006
16. J. Robertson, "Interfaces and defects of high-K oxides on silicon", Solid-State Elect, pp. 283, 2005