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Volumn 14, Issue 3, 1993, Pages 107-109

On the Geometric Component of Charge-Pumping Current in MOSFET’s

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC CURRENT DISTRIBUTION; ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); MATHEMATICAL MODELS; SEMICONDUCTOR JUNCTIONS;

EID: 0027558426     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.215126     Document Type: Article
Times cited : (71)

References (10)
  • 1
    • 0021201529 scopus 로고
    • A reliable approach to charge-pumping measurements in MOS transistors
    • G. Groeseneken, H. E. Maes, N. Beltran, and R. F. De Keers-maecker, “A reliable approach to charge-pumping measurements in MOS transistors,” IEEE Trans. Electron Devices, vol. ED-31, p. 42, 1984.
    • (1984) Keers-maecker , vol.ED-31 , pp. 42
    • Groeseneken, G.1    Maes, H.E.2    Beltran, N.3    De, R.F.4
  • 2
    • 0025477977 scopus 로고
    • Determination of interface trap capture cross sections using three-level charge pumping
    • N. S. Saks and M. G. Ancona, “Determination of interface trap capture cross sections using three-level charge pumping,” IEEE Electron Device Lett., vol. 11, p. 339, 1990.
    • (1990) IEEE Electron Device Lett. , vol.11 , pp. 339
    • Saks, N.S.1    Ancona, M.G.2
  • 3
    • 0026204013 scopus 로고
    • Spectroscopic charge pumping: a new procedure for measuring interface trap distributions on MOS transistors
    • G. Van den bosch, G. Groeseneken, P. Heremans, and H. E. Maes, “Spectroscopic charge pumping: a new procedure for measuring interface trap distributions on MOS transistors,” IEEE Trans. Electron Devices, vol. 38, p. 1820, 1991.
    • (1991) IEEE Trans. Electron Devices , vol.38 , pp. 1820
    • Van den bosch, G.1    Groeseneken, G.2    Heremans, P.3    Maes, H.E.4
  • 6
  • 7
    • 0024923684 scopus 로고
    • Geometric components of charge pumping current in SOS devices
    • R. E. Stahlbush, R. K. Lawrence, and W. Richards, “Geometric components of charge pumping current in SOS devices,” IEEE Trans. Nucl. Sci., vol. 36, p. 1998, 1989.
    • (1989) IEEE Trans. Nucl. Sci. , vol.36 , pp. 1998
    • Stahlbush, R.E.1    Lawrence, R.K.2    Richards, W.3
  • 9
    • 0015110926 scopus 로고
    • Charge transfer in charged-coupled devices
    • C.-K. Kim and M. Lenzlinger, “Charge transfer in charged-coupled devices,” J. Appl. Phys., vol. 42, p. 3586, 1971.
    • (1971) J. Appl. Phys. , vol.42 , pp. 3586
    • Kim, C.-K.1    Lenzlinger, M.2
  • 10
    • 84926420312 scopus 로고
    • Transient two-dimensional numerical analysis of the charge-pumping experiment
    • P. Habas, O. Heinreichsberger, and S. Selberherr, “Transient two-dimensional numerical analysis of the charge-pumping experiment,” in Proc. ESSDERC 1992, p. 687.
    • (1992) Proc. ESSDERC , pp. 687
    • Habas, P.1    Heinreichsberger, O.2    Selberherr, S.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.