SILC defect generation spectroscopy in HfSiON using constant voltage stress and substrate hot electron injection

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2008, Pages 324-329

  O'Connor, R ^a   Pantisano, L ^a   Degraeve, R ^a   Kauerauf, T ^a   Kaczer, B ^a   Roussel, Ph J ^a   Groeseneken, G ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CIVIL AVIATION; CONDUCTION BANDS; DATA STORAGE EQUIPMENT; DEFECTS; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENT MEASUREMENT; ELECTRON INJECTION; ELECTRON MOBILITY; HAFNIUM COMPOUNDS; HEAT CONDUCTION; HOT CARRIERS; HOT ELECTRONS; LEAKAGE CURRENTS; MOSFET DEVICES; RELIABILITY; SILICON;

CONSTANT VOLTAGE STRESS; RELIABILITY PHYSICS; SUBSTRATE HOT-ELECTRON INJECTION;

SUBSTRATES;

EID: 51549086985     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2008.4558906     Document Type: Conference Paper

References (11)

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