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Volumn 47, Issue 12, 2000, Pages 2358-2365

Tunneling into interface states as reliability monitor for ultrathin oxides

Author keywords

Interface states; Low voltage tunneling; Ultrathin oxide reliability

Indexed keywords


EID: 0001663476     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.887022     Document Type: Article
Times cited : (77)

References (26)
  • 1
    • 33747396744 scopus 로고    scopus 로고
    • The National Technology Roadmapfor Semiconductors, 1997.
    • Semiconduct. Ind. Assoc., The National Technology Roadmapfor Semiconductors, 1997.
    • Assoc, S.I.1
  • 2
    • 0029219539 scopus 로고    scopus 로고
    • 21 st century: 0.1μm and beyond," IBM J. Res. Develop., vol. 39, pp. 245-260, 1995.
    • Y. Taure et al, "CMOS scaling into the 21 st century: 0.1μm and beyond," IBM J. Res. Develop., vol. 39, pp. 245-260, 1995.
    • "CMOS Scaling into the
    • Taure, Y.1
  • 15
    • 0032254714 scopus 로고    scopus 로고
    • Timpetat., 10nmCMOS devices," in IEDMTech. Dig., 1998, p. 615
    • G. Timpetat., "Progress toward 10nmCMOS devices,"in IEDMTech. Dig., 1998, p. 615
    • "Progress toward
  • 18
    • 33747449411 scopus 로고    scopus 로고
    • Advanced Semiconductor Fundamentals. Reading, MA: Addison Wesley, 1989.
    • R. Pierret, Advanced Semiconductor Fundamentals. Reading, MA: Addison Wesley, 1989.
    • Pierret, R.1
  • 19
    • 33747443340 scopus 로고    scopus 로고
    • Physics of Semiconductor Devices: Wiley, 1981, p. 385.
    • S. Sze, Physics of Semiconductor Devices: Wiley, 1981, p. 385.
    • Sze, S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.