-
1
-
-
33747396744
-
-
The National Technology Roadmapfor Semiconductors, 1997.
-
Semiconduct. Ind. Assoc., The National Technology Roadmapfor Semiconductors, 1997.
-
-
-
Assoc, S.I.1
-
2
-
-
0029219539
-
-
21 st century: 0.1μm and beyond," IBM J. Res. Develop., vol. 39, pp. 245-260, 1995.
-
Y. Taure et al, "CMOS scaling into the 21 st century: 0.1μm and beyond," IBM J. Res. Develop., vol. 39, pp. 245-260, 1995.
-
"CMOS Scaling into the
-
-
Taure, Y.1
-
4
-
-
0021201529
-
-
IEEE Trans.Electron Devices, vol. ED- 31, pp. 42-53, Jan. 1984.
-
G. Groeseneken, H. Maes, N. Beitran, and R. F. De Keersmaecker, "A reliable approach to charge-pumping measurements in MOS transistors," IEEE Trans.Electron Devices, vol. ED-31, pp. 42-53, Jan. 1984.
-
"A Reliable Approach to Charge-pumping Measurements in MOS Transistors,"
-
-
Groeseneken, G.1
Maes, H.2
Beitran, N.3
De Keersmaecker, R.F.4
-
5
-
-
0033079368
-
-
IEEE Electron Device Lett., vol. 20, p. 92, 1999.
-
P. Masson, J.-L. Autran, and J. Brini, "On the tunneling component of charge pumping current in ultrathin gate oxide MOSFET's," IEEE Electron Device Lett., vol. 20, p. 92, 1999.
-
"On the Tunneling Component of Charge Pumping Current in Ultrathin Gate Oxide MOSFET's,"
-
-
Masson, P.1
Autran, J.-L.2
Brini, J.3
-
6
-
-
0031150256
-
-
Microelectron. Eng., vol. 36, p. 329, 1997.
-
D. Buchanan, J. Stathis, E. Cartier, and D. DiMaria, "On the relationship between sress induced leakage currents and catastrophic breakdown in ultra-thin SiO2 based dielectrics," Microelectron. Eng., vol. 36, p. 329, 1997.
-
"On the Relationship between Sress Induced Leakage Currents and Catastrophic Breakdown in Ultra-thin SiO2 Based Dielectrics,"
-
-
Buchanan, D.1
Stathis, J.2
Cartier, E.3
Dimaria, D.4
-
7
-
-
0031150213
-
-
Microelectron. Eng., vol. 36, pp. 21-24, 1997.
-
M. Depas and M. Heyns, "Relation between trap creation and breakdown during tunneling current stressing of sub 3 nm gate oxides," Microelectron. Eng., vol. 36, pp. 21-24, 1997.
-
"Relation between Trap Creation and Breakdown during Tunneling Current Stressing of Sub 3 Nm Gate Oxides,"
-
-
Depas, M.1
Heyns, M.2
-
8
-
-
33747394233
-
-
in Proc. IRPS Symp., 1999, p. 389.
-
J. Wu, E. Register, and E. Rosembaum, "Trap-assisted tunneling current through ultra-thin oxide," in Proc. IRPS Symp., 1999, p. 389.
-
"Trap-assisted Tunneling Current through Ultra-thin Oxide,"
-
-
Wu, J.1
Register, E.2
Rosembaum, E.3
-
11
-
-
0032689171
-
-
IEEE Electron Device Lett., vol. 20, p. 262, 1999.
-
Y. Wu et al, "Time dependent dielectric wearout (TDDW) technique for reliability of ultrathin gate oxide," IEEE Electron Device Lett., vol. 20, p. 262, 1999.
-
"Time Dependent Dielectric Wearout (TDDW) Technique for Reliability of Ultrathin Gate Oxide,"
-
-
Wu, Y.1
-
15
-
-
0032254714
-
-
Timpetat., 10nmCMOS devices," in IEDMTech. Dig., 1998, p. 615
-
G. Timpetat., "Progress toward 10nmCMOS devices,"in IEDMTech. Dig., 1998, p. 615
-
"Progress toward
-
-
-
17
-
-
0033347826
-
-
in IEDM Tech. Dig., 1999, p. 453.
-
N. Yang, W. Henson, and J. Wortman, "Analysis of tunneling currents and reliability of NMOSFET's with Sub2 nm gate oxides," in IEDM Tech. Dig., 1999, p. 453.
-
"Analysis of Tunneling Currents and Reliability of NMOSFET's with Sub2 Nm Gate Oxides,"
-
-
Yang, N.1
Henson, W.2
Wortman, J.3
-
18
-
-
33747449411
-
-
Advanced Semiconductor Fundamentals. Reading, MA: Addison Wesley, 1989.
-
R. Pierret, Advanced Semiconductor Fundamentals. Reading, MA: Addison Wesley, 1989.
-
-
-
Pierret, R.1
-
19
-
-
33747443340
-
-
Physics of Semiconductor Devices: Wiley, 1981, p. 385.
-
S. Sze, Physics of Semiconductor Devices: Wiley, 1981, p. 385.
-
-
-
Sze, S.1
-
20
-
-
0008536196
-
-
etal, IEEE Trans. Electron Devices, vol. 45, no. 4, p. 904, 1998.
-
R. Degraeve etal, "New insights in the relation between electron trap generation and the statistical properties of oxide breakdown," IEEE Trans. Electron Devices, vol. 45, no. 4, p. 904, 1998.
-
"New Insights in the Relation between Electron Trap Generation and the Statistical Properties of Oxide Breakdown,"
-
-
Degraeve, R.1
-
22
-
-
0032123911
-
-
IEEE Trans. Electron Devices, vol. 45, p. 1554, July 1998.
-
B. Riccö, G. Gozzi, and M. Lanzoni, "Modeling and simulation of stressinduced leakage current in ultrathin SiO2 films," IEEE Trans. Electron Devices, vol. 45, p. 1554, July 1998.
-
"Modeling and Simulation of Stressinduced Leakage Current in Ultrathin SiO2 Films,"
-
-
Riccö, B.1
Gozzi, G.2
Lanzoni, M.3
-
23
-
-
0033190191
-
-
Microelectron. Eng., vol. 48, p. 31, 1999.
-
A. Ghetti, E. Sangiorgi, T. Sorsch, and I. Kizilyalli, "The role of native traps on the tunneling characteristics of ultra-thin (1.5-3 oxides," Microelectron. Eng., vol. 48, p. 31, 1999.
-
"The Role of Native Traps on the Tunneling Characteristics of Ultra-thin 1.5-3 Oxides,"
-
-
Ghetti, A.1
Sangiorgi, E.2
Sorsch, T.3
Kizilyalli, I.4
-
24
-
-
0029409907
-
-
C-V techniques," IEEE Trans. Electron Devices, vol. 42, p. 2004, Nov. 1995.
-
N. Cohen, R. Paulsen, and M. White, "Observation and characterization of near-interface oxide traps with C-V techniques," IEEE Trans. Electron Devices, vol. 42, p. 2004, Nov. 1995.
-
"Observation and Characterization of Near-interface Oxide Traps with
-
-
Cohen, N.1
Paulsen, R.2
White, M.3
-
25
-
-
0031332017
-
-
Appl. Phys. Lett., vol. 71, p. 3230, 1997.
-
D. DiMaria and J. Stathis, "Ultimate limit for defect generation in ultra-thin silicon dioxide," Appl. Phys. Lett., vol. 71, p. 3230, 1997.
-
"Ultimate Limit for Defect Generation in Ultra-thin Silicon Dioxide,"
-
-
Dimaria, D.1
Stathis, J.2
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