Comprehensive studies of BTI effects in CMOSFETs with SiON by new measurement techniques

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2008, Pages 733-734

  Liu, Z Y ^a   Huang, Darning ^a   Liu, W J ^a   Liao, C C ^b   Zhang, L F ^b   Gan, Z H ^b   Wong, Waisum ^b   Li, Ming Fu ^a,c  

^a FUDAN UNIVERSITY   (China)

^b SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORPORATION   (China)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 51549110399     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2008.4559012     Document Type: Conference Paper

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9. communication with Dr. Mahapatra,
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11. J. Bardeen, Phys. Rev. v. 71, p. 717, 1947.
12. V.Huard IRPS07, p.686