SCOPUS 정보 검색 플랫폼

Microelectronic Engineering

Volumn 80, Issue SUPPL., 2005, Pages 333-336

New Charge Pumping model for the analysis of the spatial trap distribution in the nitride layer of SONOS devices

(6) Arreghini, A a Driussi, F a Esseni, D a Selmi, L a Van Duuren, M J b Van Schaijk, R b

a UNIVERSITY OF UDINE (Italy)

b PHILIPS RESEARCH LABORATORIES (Netherlands)

Author keywords

Charge Pumping; Modeling; Nitride traps; SONOS; Trap distribution

Indexed keywords

BAND STRUCTURE; COMPUTER SIMULATION; ELECTRIC POTENTIAL; ELECTRON TRAPS; FUNCTIONS; INTEGRAL EQUATIONS; MATHEMATICAL MODELS; NATURAL FREQUENCIES; NITRIDES; OXIDES; TRANSMISSION ELECTRON MICROSCOPY;

CHARGE PUMPING; MODELING; NITRIDE TRAPS; SONOS; TRAP DISTRIBUTION;

CHARGE COUPLED DEVICES;

EID: 19944376504 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2005.04.087 Document Type: Conference Paper

Times cited : (27)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.