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Volumn 106, Issue 7, 2009, Pages

Defect structure of Ge(111)/cubic Pr2 O3 (111) /Si (111) heterostructures: Thickness and annealing dependence

(10) Giussani, A a Zaumseil, P a Rodenbach, P a Weidner, G a Schubert, M A a Geiger, D b Lichte, H b Storck, P c Wollschlager J d Schroeder, T a

a IHP (Germany)

b DRESDEN UNIVERSITY OF TECHNOLOGY (Germany)

c SILTRONIC AG (Germany)

d UNIVERSITY OF OSNABRÜCK (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE QUALITY; EPILAYERS GROWN; GE FILMS; GE ISLAND; HETEROSTRUCTURES; IN-PLANE; MICROTWINNING; MICROTWINS; POST DEPOSITION ANNEALING; SI (1 1 1); SUPPORT SYSTEMS; TETRAGONAL DISTORTION; THERMAL MISMATCH; THERMAL TREATMENT; THICK LAYERS; X-RAY DIFFRACTION TECHNIQUES;

ANNEALING; COALESCENCE; CRYSTAL GROWTH; DEFECT DENSITY; DEFECT STRUCTURES; DEFECTS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; ROTATION; SILICON; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY; VACUUM; X RAY DIFFRACTION ANALYSIS;

GERMANIUM;

EID: 70350104983 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3224947 Document Type: Article

Times cited : (23)

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