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Volumn 81, Issue 17, 2002, Pages 3167-3169
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X-ray diffuse scattering study of the kinetics of stacking fault growth and annihilation in boron-implanted silicon
a a b b a a,c |
Author keywords
[No Author keywords available]
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Indexed keywords
DIFFUSE SCATTERING;
DISLOCATION REACTIONS;
FUNCTION OF TIME;
INTERSTITIAL MIGRATION;
SCATTERED X-RAYS;
X-RAY DIFFUSE SCATTERING;
ACTIVATION ENERGY;
BORON;
BORON COMPOUNDS;
GROWTH KINETICS;
STACKING FAULTS;
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EID: 79956004765
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1516239 Document Type: Article |
Times cited : (8)
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References (12)
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