Determination of stacking fault densities in 3C-SiC crystals by diffuse X-ray scattering

Physica Status Solidi (A) Applications and Materials Science

Volumn 204, Issue 8, 2007, Pages 2528-2534

  Boulle, A ^a   Chaussende, D ^b   Pecqueux, F ^a   Conchon, F ^a   Latu Romain, L ^b   Masson, O ^a  

^a UNIVERSITY OF LIMOGES   (France)

^b GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

FAULT DENSITIES; SHOCKLEY-TYPE STACKING FAULTS;

COMPUTER SIMULATION; CRYSTAL GROWTH; PHYSICAL VAPOR DEPOSITION; SILICON CARBIDE; X RAY SCATTERING;

CRYSTAL STRUCTURE;

EID: 34548220406     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200675652     Document Type: Article

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