Characterization of semiconductor films epitaxially grown on thin metal oxide buffer layers

Solid State Phenomena

Volumn 156-158, Issue , 2009, Pages 467-472

  Zaumseil, P ^a   Giussani, A ^a   Seifarth, O ^a   Arguirov, T ^b   Schubert, M A ^a   Schroeder, T ^a  

^a IHP   (Germany)

^b BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Engineered silicon wafer; Heteroepitaxy; Raman spectroscopy; SIS structure; TEM; XRD

Indexed keywords

BUFFER LAYERS; DIFFRACTION; EPITAXIAL GROWTH; GERMANIUM; GERMANIUM OXIDES; METALLIC COMPOUNDS; OXIDE FILMS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; STACKING FAULTS; SUBSTRATES; SURFACE DEFECTS; SURVEYING INSTRUMENTS; SWITCHING CIRCUITS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; METALS; PRASEODYMIUM COMPOUNDS; SILICON WAFERS;

BUFFER MATERIALS; EPITAXIALLY GROWN; GERMANIUM FILMS; HETEROEPITAXY; IN-PLANE ORIENTATION; METAL OXIDES; OXIDE INTERFACES; POST DEPOSITION ANNEALING; RAMAN MEASUREMENTS; RAY GRAZING; SEMICONDUCTOR FILMS; SEMICONDUCTOR LAYERS; SI LAYER; SI(111) SUBSTRATE; SINGLE-CRYSTALLINE; STRUCTURAL DEFECT; TEM; THIN METAL OXIDE; THREADING DISLOCATION; WAFER SURFACE; X-RAY POLE FIGURE MEASUREMENT; X-RAY TECHNIQUES; XRD; GRAZING-INCIDENT X-RAY DIFFRACTIONS;

SILICON WAFERS; SUBSTRATES;

EID: 75849142513     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.156-158.467     Document Type: Conference Paper

References (13)

1. R. Waser: Nanoelectronics and Information Technology-Advanced Electronic Materials and Novel Devices (Wiley, Weinheim, 2003).
2. N.A. Bojarczuk, M. Copel, S. Guha, V. Narayanan, E.J. Preisler, F.M. Ross, and H. Shang, Appl. Phys. Lett. Vol. 83 (2003), p. 5443.
3. J.W. Seo et al., Microelectronic Engineering Vol. 84 (2007), p.2328
4. E. A. Fitzgerald, Mater. Sci. Eng. Vol. B 124-125 (2005), p. 8
5. T. Schroeder, P. Zaumseil, G. Weidner, Ch. Wenger, J. Dabrowski, H.-J. Müssig, and P. Storck, J. Appl. Phys. Vol. 99 (2006), p. 014101.
6. T. Schroeder, I. Costina, P. Storck, A. Wilke, O. Seifarth, A. Giussani, H.-J. Müssig, and P. Zaumseil, J. Appl. Phys. Vol. 103 (2008), p. 084102.
7. A. Giussani, P. Rodenbach, P. Zaumseil, J. Dabrowski, R. Kurps, G. Weidner, H.-J. Müssig, P. Storck, J. Wollschläger, and T. Schroeder, J. Appl. Phys. Vol. 105 (2009), p. 033512.
8. P. Zaumseil, G. Weidner, and T. Schroeder, Solid State Phenom. Vol. 131-133 (2007), p. 619.
9. P. Zaumseil, and T. Schroeder, J. Appl. Phys. Vol. 104 (2008), p. 023532.
10. A. Giussani, O. Seifarth, P. Rodenbach, H.-J. Müssig, P. Zaumseil, T. Weisemöller, C. Deiter, J. Wollschläger, P. Storck, and T. Schroeder, J. Appl. Phys. Vol. 103 (2008), p. 084110.
11. P. Zaumseil, A. Giussani, P. Rodenbach, and T. Schroeder, phys. stat. sol. (a), accepted (2009).
12. P. Zaumseil, J. Phys. D: Appl. Phys. Vol. 41 (2008) p. 135308
13. J.M. Hartmann, A.M. Papon, V. Destefanis, T. Billon, J. Cryst. Growth Vol. 310 (2008), p. 5287.