X-ray diffuse scattering from stacking faults in thick 3C-SiC single crystals

Applied Physics Letters

Volumn 89, Issue 9, 2006, Pages

  Boulle, A ^a   Chaussende, D ^b   Latu Romain, L ^b   Conchon, F ^a   Masson, O ^a   Guinebretiere R ^a  

^a UNIVERSITY OF LIMOGES   (France)

^b GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; SINGLE CRYSTALS; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; X RAY SCATTERING;

ANISOTROPIC FAULT DISTRIBUTION; DIFFERENCE-EQUATION DESCRIPTION; DIFFUSE SCATTERING INTENSITY DISTRIBUTION; SHOCKLEY-TYPE STACKING FAULTS;

SILICON CARBIDE;

EID: 33748349253     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2338787     Document Type: Article

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