Enhanced subthreshold slopes in large diameter single wall carbon nanotube field effect transistors

IEEE Transactions on Nanotechnology

Volumn 7, Issue 4, 2008, Pages 458-462

  Pisana, Simone ^a   Zhang, Can ^a   Ducati, Caterina ^a   Hofmann, Stephan ^a   Robertson, John ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Field effect transistor (FET); Ohmic contact; Schottky barrier; Single wall carbon nanotube (SWNT)

Indexed keywords

CARBON NANOTUBES; CHROMIUM; GATE DIELECTRICS; GATES (TRANSISTOR); MESFET DEVICES; METALS; NANOCOMPOSITES; NANOPORES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOTECHNOLOGY; NANOTUBES; SCHOTTKY BARRIER DIODES; SILICON COMPOUNDS; SINGLE-WALLED CARBON NANOTUBES (SWCN); TRANSISTORS; WALLS (STRUCTURAL PARTITIONS);

ADHESION STRENGTHS; FIELD EFFECT TRANSISTOR (FET); GATE DIELECTRIC THICKNESS; LARGE DIAMETER; OHMIC CONTACT; SCHOTTKY BARRIER; SCHOTTKY BARRIERS; SINGLE WALL CARBON NANO TUBES; SINGLE WALL CARBON NANOTUBE (SWNT); SUBTHRESHOLD SLOPES; WORK FUNCTIONS;

FIELD EFFECT TRANSISTORS;

EID: 48849098003     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2008.917849     Document Type: Article

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