Low-frequency noise in nanoscale ballistic transistors

Nano Letters

Volumn 7, Issue 1, 2007, Pages 194-198

  Tersoff, J ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTRINSIC POTENTIAL; NANOTUBE TRANSISTORS; VOLTAGE-DEPENDENT SENSITIVITY;

BALLISTICS; CARBON NANOTUBES; GATES (TRANSISTOR); NANOTECHNOLOGY; NATURAL FREQUENCIES; SENSITIVITY ANALYSIS; SPURIOUS SIGNAL NOISE; VOLTAGE MEASUREMENT;

TRANSISTORS;

NANOMATERIAL;

ARTICLE; NOISE;

NANOSTRUCTURES; NOISE;

EID: 33846862006     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl062141q     Document Type: Article

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