Origin of gate hysteresis in carbon nanotube field-effect transistors

Journal of Physical Chemistry C

Volumn 111, Issue 34, 2007, Pages 12504-12507

  Lee, Joon Sung ^a,b   Ryu, Sunmin ^a   Yoo, Kwonjae ^a   Choi, Insung S ^b   Yun, Wan Soo ^a   Kim, Jinhee ^a  

^a Korea Research Institute of Standards and Science   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; ANNEALING; CARBON NANOTUBES; DESORPTION; HYSTERESIS; LOW TEMPERATURE EFFECTS; SILICA; ULTRAHIGH VACUUM; WATER;

AMBIENT INTERFACES; GATE HYSTERESIS OF; THERMAL ANNEALING;

GATES (TRANSISTOR);

EID: 34548552835     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp074692q     Document Type: Article

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