Short-channel effects in contact-passivated nanotube chemical sensors

Applied Physics Letters

Volumn 83, Issue 18, 2003, Pages 3821-3823

  Bradley, Keith ^a   Gabriel, Jean Christophe P ^a   Star, Alexander ^a   Grüner, George ^a,b  

^a Nanomix Inc   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMINES; AMMONIA; CARBON NANOTUBES; DECOMPOSITION; DESIGN; ELECTRIC CONTACTS; FIELD EFFECT TRANSISTORS; PASSIVATION; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR MATERIALS; SILICA; THRESHOLD VOLTAGE;

CHEMICAL DOPING; CONTACT PASSIVATED NANOTUBE CHEMICAL SENSORS; METAL CONTACTS; METAL NANOTUBE CONTACTS; NANOTUBE TRANSISTORS; POLYETHYLENE IMINE; SHORT CHANNEL EFFECTS;

CHEMICAL SENSORS;

EID: 0344497372     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1619222     Document Type: Article

References (25)

1. S. J. Tans, A. R. M. Verschueren, and C. Dekker, Nature (London) 393, 49 (1998).
2. R. Martel, T. Schmidt, H. R. Shea, T. Hertel, and Ph. Avouris, Appl. Phys. Lett. 73, 2447 (1998)
3. A. Bachtold, P. Hadley, T. Nakanishi, and C. Dekker, Science 294, 1317 (2001).
4. P. G. Collins, K. Bradley, M. Ishigami, and A. Zettl, Science 287, 1801 (2000).
5. J. Kong, N. R. Franklin, C. Zhou, M. G. Chapline, S. Peng, K. Cho, and H. Dai, Science 287, 622 (2000).
6. K. Bradley, S.-H. Jhi, P. G. Collins, J. Hone, M. L. COhen, S. G. Louie, and A. Zettl, Phys. Rev. Lett. 85, 4361 (2002).
7. A. Star, J.-C. P. Gabriel, K. Bradley, and G. Grüner, Nano Lett. 3, 459 (2003)
8. R. J. Chen, S. Bangsaruntip, K. A. Drouvalakis, K. Nam, M. Shim, Y. Li, W. Kim, P. J. Utz, and J. Dai, Proc. Natl. Acad. Sci. U.S.A. 100, 4984 (2003).
9. S. Heinze, J. Tersoff, R. Martel, V. Derycke, J. Appenzeller, and Ph. Avouris, Phys. Rev. Lett. 89, 106801 (2002).
10. C. Zhou, J. Kong, E. Yenlimez, and H. Dai, Science 290, 1552 (2000).
11. T. Nakanishi, A. Bachtold, and C. Dekker, Phys. Rev. B 66, 073307 (2002).
12. M. Freitag, A. T. Johnson, S. Kalinin, and D. Bonnell, Phys. Rev. Lett. 89, 216801 (2002).
13. J. Kong, J. Cao, H. Dai, and E. Anderson, Appl. Phys. Lett. 80, 73 (2002).
14. J. B. Cui, M. Burghard, and K. Kem, Nano Lett. 2, 117 (2002).
15. W. Z. Li, S. S. Xie, L. X. Qian, B. H. Chang, B. S. Zou, W. Y. Zhou, R. Zhao, and G. Wang, Science 274, 1701 (1996)
16. J. C. P. Gabriel, Mater. Res. Soc. Symp. Proc. 762, Q.12.7.1 (2003).
17. K. Bradley, J. Cumings, A. Star, J.-C. P. Gabriel, and G. Grüner, Nano Lett. 3, 639 (2003).
18. F. Léonard and J. Tersoff, Phys. Rev. Lett. 84, 4693 (2000).
19. M. Shim, A. Javey, N. W. S. Kam, and H. Dai, J. Am. Chem. Soc. 123, 11512 (2001).
20. W. Kim, A. Javey, O. Vermesh, Q. Wang, Y. Li, and H. Dai, Nano Lett. 3, 193 (2003)
21. M. S. Fuhrer, B. M. Kim, T. Durkop, and T. Brintlinger, ibid. 2, 755 (2002)
22. M. Radosavljevic, M. Freitag, K. V. Thadani, and A. T. Johnson, ibid. 2, 761 (2002).
23. S.-H. Jhi, S. G. Louie, and M. L. Cohen, Phys. Rev. Lett. 85, 1710 (2000).
24. F. Léonard and J. Tersoff, Phys. Rev. Lett. 83, 5174 (1999).
25. H. Chang, J. D. Lee, S. M. Lee, and Y. H. Lee, Appl. Phys. Lett. 79, 3863 (2001).