Synchrotron measurement of the effect of linewidth scaling on stress in advanced Cu/Low- k interconnects

Journal of Applied Physics

Volumn 106, Issue 5, 2009, Pages

  Wilson, Christopher J ^a,b   Croes, Kristof ^b   Zhao, Chao ^b   Metzger, Till H ^c   Zhao, Larry ^d   Beyer, Gerald P ^b   Horsfall, Alton B ^a   O'Neill, Anthony G ^a   Tkei, Zsolt ^b  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

^b IMEC   (Belgium)

^c EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^d Intel Corporation Belgium   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CU/LOW-K INTERCONNECTS; DIRECT MEASUREMENT; FINITE ELEMENT SIMULATIONS; GRAIN STRUCTURES; GRAZING INCIDENCE; LATTICE PARAMETER MEASUREMENT; MEASURED DATA; NARROW LINES; ORDER OF MAGNITUDE; POLYCRYSTALLINE STRUCTURE; STRAIN TENSOR; STRESS CONTRAST; STRESS EVOLUTION; SYNCHROTRON MEASUREMENTS;

GRAIN GROWTH; GRAIN SIZE AND SHAPE; INTERDIFFUSION (SOLIDS); LIGHT; LINEWIDTH; PRESSURE DROP;

ASPECT RATIO;

EID: 70349313515     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3212572     Document Type: Article

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