Effects of dielectric material and linewidth on thermal stresses of Cu line structures

Proceedings of the IEEE 2002 International Interconnect Technology Conference, IITC 2002

Volumn , Issue , 2002, Pages 271-273

  Gan, Dongwen ^a   Wang, Guotao ^a   Ho, P S ^a   Morrow, Xiaorong ^b   Leu, Jihperng ^b  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; DIELECTRIC MATERIALS; FINITE ELEMENT METHOD; LINEWIDTH; ORGANIC POLYMERS; SILICON OXIDES; THERMAL STRESS; X RAY DIFFRACTION;

CARBON DOPED OXIDES; CONFINEMENT EFFECTS; CU LINES; STRESS BEHAVIOR;

LOW-K DIELECTRIC;

EID: 84961734442     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2002.1014954     Document Type: Conference Paper

References (6)

1. J. Kasthurirangan, Y. Du, P. Ho, C. Capasso, M. Gall, and H. Kawasaki, in Stress Induced Phenomena in Metallization, AIP Conf. Proc. Vol.491, 1999, pp.304-314.
2. P. R. Besser, S. Brennan and J.C. Bravman, J. Mater. Res. 9, 13, 1994.
3. S. H. Rhee, Y. Du and P. S. Ho, Proc. Int. Interconnect Tech. Conf. 2001, pp.89-92.
4. J. Kasthurirangan, Ph.D. thesis, The University of Texas at Austin, 1998.
5. S. H. Rhee, Ph.D. thesis, the University of Texas at Austin, 2001.
6. Y. Du, G. T. Wang and P. S. Ho, to be published.